​比亚迪BGN4​0T65SD TO-247封装IGBT模块

一　概述

IGBT in advanced TrenchFS Technology with soft,fast recovery anti-parallel diode.
具有Trench FS技术的IGBT反并联软快恢复二极管.

二　特征

 650V Trench FS technology

　650V Trench FS技术
 Low conduction and switching losses
 低导通和开关损耗
 Saturation voltage:VCE(sat), typ=1.7V@IC=40A and TC=25°C
 通态压降, VCE(sat), typ =1.7V @ IC = 40A and Tc=25°C
 Low gate charge
 低栅极电荷

三　应用

 UPS
 不间断电源
 Inverter
 变频器

四　封装